- Low on-voltage drop (Vcesat)
- Low Cres / Cies ratio ( no cross conduction susceptibility)
- Switching losses include diode recovery energy
- Very soft ultra fast recovery antiparallel diode
- Short circuit withstand time 10µs
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
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