Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Minimum Avalanche Energy − 500 mJ
• Gate Resistor (RG) = 70
• These are Pb−Free Devices
NGB8207NG ( B8207NG) IGBT N-CHANNEL 20A 365V TO-252
د.ج 450.00
NGB8207NG (B8207NG) IGBT SMD
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