- Type of Transistor: MOSFET
- Type of Control Channel: N -Channe
- Maximum Power Dissipation (Pd): 370 W
- Maximum Drain-Source Voltage |Vds|: 75 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 210 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 160 nC
- Rise Time (tr): 87 nS
- Drain-Source Capacitance (Cd): 820 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm
IRFB3077 # USED MOSFET N-CH 120A 75V TO-220
د.ج 240.00
IRFB3077 # USED MOSFET N-CH 120A 75V TO-220
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