Description
The Toshiba Semiconductor and Storage K100E10NE is a power transistor that is ideal for use in a range of electronic devices. It has a wide operating voltage range of 600V and a maximum output current of 10A. The TO-220 reference case makes it easy to mount and use. The device has a low fake threat in the open market of 33%. The supply and demand status is balanced. It is a reliable and efficient electronic component for various applications.
Features :
Low drain−source on-resistance : RDS(ON) = 4.3 mΩ (typ.)
Low leakage current : IDSS = 10 µA (max) (VDS = 100 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Vous pouvez télécharger la fiche technique :
Cliquez ici
Avis
Il n’y a pas encore d’avis.